The Infineon Technologies 1024616-IPA60R600P7SXKSA1 is a N-Channel MOSFET transistor with a drain to source voltage (Vdss) of 600 V and a power dissipation of 21 W (Tc).

• It has a continuous drain current (ID) of 6A (Tc) and an on-state resistance of 600mOhm @ 1.7A, 10V.
• The gate charge (Qg) (Max) @ Vgs is 9 nC @ 10 V, and the input capacitance (Ciss) (Max) @ Vds is 363 pF @ 400 V.
• It is suitable for use in applications such as transistors - FETs, MOSFETs - Single.
• This product comes in a TO-220-3 Full Pack package.