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IPA65R190CFD

Part No IPA65R190CFD
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 650V 17.5A Automotive 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 650V 17.5A TO220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 17.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 730μA
Max Gate Charge 68nC @ 10V
Max Input Capacitance 1850pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 34W (Tc)
Maximum Rds On at Id,Vgs 190 mOhm @ 7.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220 Full Pack
Dimension TO-220-3 Full Pack
Win Source Part Number 205217-IPA65R190CFD
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name IPA65R190CFD
Introduction Date May 05, 2011
ECCN EAR99
Country of Origin China, Malaysia, Philippines
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IPA65R190CFD CAD Model

Description

The IPA65R190CFD is a N-Channel MOSFET manufactured by Infineon Technologies.

  • Supply and Demand Status: limited
  • Power Dissipation: 34W (Tc)
  • Maximum Rds On @ Id, Vgs: 190 mOhm @ 7.3A, 10V
  • Gate-Source Threshold Voltage: 4.5V @ 730μA
  • Maximum Input Capacitance: 1850pF @ 100V

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $6.2562 $62.5620
23+ $5.1333 $118.0659
35+ $4.9730 $174.0550
48+ $4.8126 $231.0048
63+ $4.6521 $293.0823
84+ $4.1709 $350.3556
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,000 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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