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Same model may have multiple batches, images only for reference.
IPB049N06L3GATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPB049N06L3GATMA1

Part No IPB049N06L3GATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 80A TO263-3
Datasheet
IPB049N06L3GATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 58μA
Max Gate Charge 50nC @ 4.5V
Max Input Capacitance 8400pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 115W (Tc)
Maximum Rds On at Id,Vgs 4.7 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 107457-IPB049N06L3GATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB049N06L3GATMA1 CAD Model

Description

The Infineon Technologies MOSFET is a single discrete semiconductor product that is part of the MOSFET category.

  • Category: MOSFET
  • Supply and Demand: Balance
  • Popularity: Medium
  • Manufacturer: Infineon Technologies
  • Win Source Part Number: 107457-IPB049N06L3GATMA1
  • Status: Obsolete (EOL)
  • Maximum Power Dissipation: 115W

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Quantity Unit Price Ext. Price
45+ $1.3063 $58.7835
110+ $1.0718 $117.8980
170+ $1.0383 $176.5110
230+ $1.0049 $231.1270
300+ $0.9714 $291.4200
400+ $0.8709 $348.3600
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