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Same model may have multiple batches, images only for reference.
IPB100N08S2L07ATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPB100N08S2L07ATMA1

Part No IPB100N08S2L07ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 100A TO263-3
Datasheet
IPB100N08S2L07ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 246nC @ 10V
Max Input Capacitance 5400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1045774-IPB100N08S2L07ATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB100N08S2L07ATMA1 CAD Model

Description

The Infineon Technologies IPB100N08S2L07ATMA1 is an N-channel MOSFET transistor used in various electronic circuits.

  • Channel Type: N-Channel MOSFET
  • Power Dissipation: 300W (Tc)
  • Continuous Drain Current: 100A (Tc) @ 25°C
  • Drain-Source Breakdown Voltage: 75V
  • Rds On: 6.5 mOhm @ 80A, 10V
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Gate Charge: 246nC @ 10V
  • Input Capacitance: 5400pF @ 25V
  • Gate-Source Voltage: ±20V
  • Package: PG-TO263-3-2
  • Temperature Range: -55°C to 175°C (TJ)
  • Application: Discrete semiconductor products

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