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Same model may have multiple batches, images only for reference.
IPB25N06S3L-22 Real Image
Same model may have multiple batches, images only for reference.

IPB25N06S3L-22

Part No IPB25N06S3L-22
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 25A D2PAK
Datasheet
IPB25N06S3L-22 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.2V @ 20μA
Max Gate Charge 47nC @ 10V
Max Input Capacitance 2260pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 21.3 mOhm @ 17A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1045787-IPB25N06S3L-22
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB25N06S3L-22 CAD Model

Description

The Infineon Technologies 1045787-IPB25N06S3L-22 is an N-Channel MOSFET with a drain-source breakdown voltage of 55V and continuous drain current of 25A at 25°C.

  • Maximum Power Dissipation: 50W (Tc)
  • Maximum Rds On: 21.3 mOhm @ 17A, 10V
  • Gate-Source Threshold Voltage: 2.2V @ 20μA
  • Maximum Gate Charge: 47nC @ 10V
  • Case/Package: PG-TO263-3-2
  • Dimensions: TO-263AB
  • Suitable for: use in discrete semiconductor products.

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