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IPB45N04S4L-08

Part No IPB45N04S4L-08
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™T2
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.9mOhm @ 45A, 10V
Vgs(th) (Max) @ Id 2.2V @ 17µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 2340 pF @ 25 V
Power Dissipation (Max) 45W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 693 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 874738-IPB45N04S4L-08
Ultra Librarian 3D Model Ultra Librarian IPB45N04S4L-08 CAD Model

Description

The Infineon Technologies 874738-IPB45N04S4L-08 is a MOSFET transistor in the OptiMOS™T2 series.

  • Series: OptiMOS™T2
  • Application: discrete semiconductor applications
  • Channel Type: N-Channel
  • Vdss: 40V
  • Id: 45A @ 25°C
  • Rds On (Max): 7.9mOhm @ 45A and 10V
  • Vgs(th) (Max): 2.2V @ 17µA
  • Power Dissipation: 45W
  • Operating Temperature: -55°C to 175°C
  • Mounting Type: Surface mountable
  • Package: TO-263-3, D²Pak
  • Gate Charge (Qg): 30nC @ 10V
  • Input Capacitance (Ciss): 2340pF @ 25V

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $6.6008 $59.4072
22+ $5.4158 $119.1476
34+ $5.2472 $178.4048
46+ $5.0774 $233.5604
59+ $4.9088 $289.6192
79+ $4.4006 $347.6474
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,300 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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