The IPB50R199CPATMA1 is a N-Channel MOSFET transistor from Infineon Technologies. Bold the product name (e.g., BAV99S,135 → IPB50R199CPATMA1) and manufacturer (e.g., Nexperia USA Inc. → Infineon Technologies).

• Series: CoolMOS™
• Mounting Type: Surface Mount
• Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Drain to Source Voltage (Vdss): 550 V
• Power Dissipation (Max): 139W (Tc)
• Technology: MOSFET (Metal Oxide)
• FET Type: N-Channel
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Continuous Drain Current (Id) @ 25°C: 17A (Tc)
• Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 660μA
• Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 100 V