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Same model may have multiple batches, images only for reference.
IPB50R299CPATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPB50R299CPATMA1

Part No IPB50R299CPATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 550V 12A TO-263
Datasheet
IPB50R299CPATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 550V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 440μA
Max Gate Charge 31nC @ 10V
Max Input Capacitance 1190pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 104W (Tc)
Maximum Rds On at Id,Vgs 299 mOhm @ 6.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1045802-IPB50R299CPATMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPB50R299CPATMA1 CAD Model

Description

The Infineon Technologies IPB50R299CPATMA1 is a MOSFET technology N-channel polarity power transistor.

  • Polarity: N-channel
  • Power Dissipation: 104W (Tc)
  • Drain-Source Breakdown Voltage: 550V
  • Continuous Drain Current: 12A (Tc) @ 25°C
  • Maximum Rds On: 299 mOhm @ 6.6A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 1190pF @ 100V
  • Package: PG-TO263-3-2
  • Status: Active

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