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Same model may have multiple batches, images only for reference.
IPB60R125C6 Real Image
Same model may have multiple batches, images only for reference.

IPB60R125C6

Part No IPB60R125C6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 30A TO263
Datasheet
IPB60R125C6 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 960μA
Max Gate Charge 96nC @ 10V
Max Input Capacitance 2127pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 219W (Tc)
Maximum Rds On at Id,Vgs 125 mOhm @ 14.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 068977-IPB60R125C6
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPB60R125C6 CAD Model

Description

The Infineon Technologies IPB60R125C6 is an N-channel MOSFET that is designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 219W (Tc)
  • Continuous Drain Current @ 25°C: 30A (Tc)
  • Drain-Source Breakdown Voltage: 600V
  • Gate-Source Threshold Voltage: 3.5V @ 960μA
  • Maximum Rds On @ Id,Vgs: 125 mOhm @ 14.5A, 10V
  • Package: PG-TO263-2
  • Temperature Range: -55°C to 150°C (TJ)
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 2127pF @ 100V

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Quantity Unit Price Ext. Price
19+ $2.7273 $51.8187
45+ $2.2378 $100.7010
70+ $2.1678 $151.7460
96+ $2.0979 $201.3984
124+ $2.0280 $251.4720
165+ $1.8182 $300.0030
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