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Same model may have multiple batches, images only for reference.
IPB60R190C6 Real Image
Same model may have multiple batches, images only for reference.

IPB60R190C6

Part No IPB60R190C6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 20.2A TO263 / Trans MOSFET N-CH 650V 20.2A 3-Pin(2+Tab) D2PAK T/R
Datasheet
IPB60R190C6 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 630μA
Max Gate Charge 63nC @ 10V
Max Input Capacitance 1400pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 151W (Tc)
Maximum Rds On at Id,Vgs 190 mOhm @ 9.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 139501-IPB60R190C6
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name IPB60R190C6
Introduction Date August 27, 2009
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian IPB60R190C6 CAD Model

Description

The Infineon Technologies 139501-IPB60R190C6 is a high-quality MOSFET component designed for use in discrete semiconductor products.

  • Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current @ 25°C: 20.2A (Tc)
  • Power Dissipation: 151W (Tc)
  • Gate-Source Threshold Voltage: 3.5V @ 630μA
  • Maximum Gate Charge: 63nC @ 10V
  • Maximum Rds On @ Id,Vgs: 190 mOhm @ 9.5A, 10V
  • Package: PG-TO263-2
  • Mounting Technology: SMD (SMT)
  • Suitable for: Use in a wide range of applications, including power supplies, motor control, and lighting

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