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Same model may have multiple batches, images only for reference.
IPB60R380P6ATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPB60R380P6ATMA1

Part No IPB60R380P6ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
IPB60R380P6ATMA1 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™ P6
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 10.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 4.5V @ 320µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 877 pF @ 100 V
Power Dissipation (Max) 83W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IPB60R
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1315880-IPB60R380P6ATMA1
Ultra Librarian 3D Model Ultra Librarian IPB60R380P6ATMA1 CAD Model

Description

The IPB60R380P6ATMA1 is a N-channel MOSFET that is designed for use in a variety of applications. It has a maximum drain to source voltage rating of 600V and a maximum continuous drain current rating of 10.6A. The MOSFET is packaged in tape and reel and is mounted using SMD (SMT) technology. The IPB60R380P6ATMA1 is a great solution for those looking for a reliable and high-performance MOSFET.

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Quantity Unit Price Ext. Price
40+ $1.6320 $65.2800
90+ $1.3398 $120.5820
135+ $1.2982 $175.2570
185+ $1.2555 $232.2675
240+ $1.2139 $291.3360
320+ $1.0880 $348.1600
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Availability: 2,281 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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