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Same model may have multiple batches, images only for reference.
IPB60R520CPATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPB60R520CPATMA1

Part No IPB60R520CPATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 6.8A TO-263
Datasheet
IPB60R520CPATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 250μA
Max Gate Charge 31nC @ 10V
Max Input Capacitance 630pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 66W (Tc)
Maximum Rds On at Id,Vgs 520 mOhm @ 3.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1045805-IPB60R520CPATMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPB60R520CPATMA1 CAD Model

Description

The Infineon Technologies IPB60R520CPATMA1 is an N-Channel MOSFET electronic component that has a maximum power dissipation of 66W (Tc).

  • Maximum Power Dissipation: 66W (Tc)
  • Mounting: SMD (SMT)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: PG-TO263-2
  • Drain-Source Breakdown Voltage: 600V

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138+ $2.5260 $348.5880
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