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Same model may have multiple batches, images only for reference.
IPB77N06S212ATMA2 Real Image
Same model may have multiple batches, images only for reference.

IPB77N06S212ATMA2

Part No IPB77N06S212ATMA2
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 77A TO263-3 / N-Channel 55 V 77A (Tc) 158W (Tc) Surface Mount PG-TO263-3-2
Datasheet
IPB77N06S212ATMA2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 77A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 11.7mOhm @ 38A, 10V
Vgs(th) (Max) @ Id 4V @ 93µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1770 pF @ 25 V
Power Dissipation (Max) 158W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IPB77N06
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001061294
Standard Package 1,000
Win Source Part Number 1006006-IPB77N06S212ATMA2
Ultra Librarian 3D Model Ultra Librarian IPB77N06S212ATMA2 CAD Model

Description

The IPB77N06S212ATMA2 is an N-channel MOSFET from Infineon Technologies.

  • Series: OptiMOS™
  • Drain to Source Voltage (Vdss): 55V
  • Continuous Drain Current (Id) @ 25°C: 77A
  • Rds On (Max) @ 38A, 10V: 11.7mOhm
  • Gate Charge (Qg) (Max) @ 10V: 60nC
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Temperature Range: -55°C to 175°C

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