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Same model may have multiple batches, images only for reference.
IPB80N06S208ATMA2 Real Image
Same model may have multiple batches, images only for reference.

IPB80N06S208ATMA2

Part No IPB80N06S208ATMA2
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 80A TO263-3
Datasheet
IPB80N06S208ATMA2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 150μA
Max Gate Charge 96nC @ 10V
Max Input Capacitance 2860pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 215W (Tc)
Maximum Rds On at Id,Vgs 7.7 mOhm @ 58A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 127135-IPB80N06S208ATMA2
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB80N06S208ATMA2 CAD Model

Description

The Infineon Technologies IPB80N06S208ATMA2 is an N-channel MOSFET transistor that is ideal for use in a wide range of applications.

  • Power Dissipation: 215W
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 80A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 150μA
  • Maximum Gate Charge: 96nC @ 10V
  • Package: PG-TO263-3-2
  • Mounting: surface-mount applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.5024 $60.0576
57+ $2.0534 $117.0438
88+ $1.9891 $175.0408
120+ $1.9251 $231.0120
156+ $1.8609 $290.3004
208+ $1.6683 $347.0064
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Availability: 460 pieces
MOQ: 24 pcs
Order Increment : 1 pcs
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