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IPC60N04S406ATMA1

Part No IPC60N04S406ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 60A TDSON-8-23 / N-Channel 40 V 60A (Tc) 63W (Tc) Surface Mount PG-TDSON-8-23
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 30µA
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2650 pF @ 25 V
Power Dissipation (Max) 63W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TDSON-8-23
Package / Case 8-PowerTDFN
Base Product Number IPC60N
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001121640,IFEINFIPC60N04S406ATMA1,2156-IPC60N04S406ATMA1-ITTR
Standard Package 5,000
Win Source Part Number 965360-IPC60N04S406ATMA1
Ultra Librarian 3D Model Ultra Librarian IPC60N04S406ATMA1 CAD Model

Description

The Infineon Technologies IPC60N04S406ATMA1 is a discrete semiconductor product that belongs to the OptiMOS™ series.

  • Series: OptiMOS™
  • FET Type: N-channel MOSFET
  • Drain to Source Voltage: 40 V
  • Continuous Drain Current: 60A @ 25°C
  • Rds On: 6mOhm @ 30A, 10V
  • Gate Charge: 33 nC @ 10 V
  • Input Capacitance: 2650 pF @ 25 Vds

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.7300 $58.4000
195+ $0.5990 $116.8050
300+ $0.5803 $174.0900
415+ $0.5616 $233.0640
535+ $0.5429 $290.4515
715+ $0.4867 $347.9905
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,900 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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