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Same model may have multiple batches, images only for reference.
IPD038N04NGBTMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPD038N04NGBTMA1

Part No IPD038N04NGBTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 90A TO252-3
Datasheet
IPD038N04NGBTMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 45μA
Max Gate Charge 56nC @ 10V
Max Input Capacitance 4500pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 94W (Tc)
Maximum Rds On at Id,Vgs 3.8 mOhm @ 90A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1045840-IPD038N04NGBTMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPD038N04NGBTMA1 CAD Model

Description

The IPD038N04NGBTMA1 is a N-Channel MOSFET transistor manufactured by Infineon Technologies.

  • Type: N-Channel MOSFET
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 90A @ 25°C
  • Maximum On-Resistance: 3.8 mOhm @ 90A and 10V gate-source voltage
  • Maximum Gate Charge: 56nC @ 10V gate-source voltage
  • Input Capacitance: 4500pF @ 20V drain-source voltage
  • Power Dissipation: 94W @ 175°C
  • Mounting: SMD (SMT)
  • Package: PG-TO252-3

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