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IPD03N03LB G Infineon Technologies
Same model may have multiple batches, images only for reference.

IPD03N03LB G

Part No IPD03N03LB G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 90A TO-252
Datasheet
IPD03N03LB G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2V @ 70μA
Gate Charge (Qg) (Maximum) @ Vgs 40nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds 5200pF @ 15V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 115W (Tc)
Rds On (Maximum) @ Id, Vgs 3.3 mOhm @ 60A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package PG-TO252-3
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 776856-IPD03N03LB G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPD03N03LB G CAD Model

Description

The Infineon Technologies IPD03N03LB G is a MOSFET power transistor that operates in the OptiMOS series, manufactured by Infineon Technologies.

  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Mounting: Surface Mount
  • Maximum Power Dissipation (Tc): 115W
  • Maximum Continuous Drain Current (Tc) @ 25°C: 90A
  • Gate Charge (Qg) @ 5V: 40nC
  • Input Capacitance (Ciss) @ 15V: 5200pF
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Rds On @ Id, Vgs: 3.3 mOhm @ 60A, 10V
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand Status: Limited

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