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IPD053N06NATMA1

Part No IPD053N06NATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 18A TO252-3 / Trans MOSFET N-CH 60V 45A 3-Pin(2+Tab) DPAK T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 60V
Current - Continuous Drain (Id) @ 25°C 18A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Vgs(th) (Maximum) @ Id 2.8V @ 36μA
Gate Charge (Qg) (Maximum) @ Vgs 27nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2000pF @ 30V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 3W (Ta), 83W (Tc)
Rds On (Maximum) @ Id, Vgs 5.3 mOhm @ 45A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package PG-TO252-3
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 776857-IPD053N06NATMA1
Popularity Medium
Supply and Demand Status Limited
Family Name IPD053N06N
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian IPD053N06NATMA1 CAD Model

Description

The Infineon Technologies IPD053N06NATMA1 is an OptiMOS MOSFET transistor, manufactured by Infineon Technologies.

  • Power Maximum (Ta): 3W
  • Power Maximum (Tc): 83W
  • Continuous Drain Current (Ta): 18A
  • Continuous Drain Current (Tc): 45A
  • Drain-Source Voltage: 60V
  • Gate Charge: 27nC
  • Input Capacitance @ 30V: 2000pF
  • Input Type: N channel
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Category: Discrete Semiconductor Products
  • Estimated EOL Date: 2029

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9659 $53.1245
130+ $0.7925 $103.0250
200+ $0.7677 $153.5400
270+ $0.7430 $200.6100
350+ $0.7182 $251.3700
470+ $0.6439 $302.6330
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 40,000 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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