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Same model may have multiple batches, images only for reference.
IPD09N03LBG Real Image
Same model may have multiple batches, images only for reference.

IPD09N03LBG

Part No IPD09N03LBG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 50A DPAK
Datasheet
IPD09N03LBG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 20μA
Max Gate Charge 13nC @ 5V
Max Input Capacitance 1600pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 58W (Tc)
Maximum Rds On at Id,Vgs 9.1 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 068989-IPD09N03LBG
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPD09N03LBG CAD Model

Description

The Infineon Technologies IPD09N03LBG is an N-channel MOSFET designed for surface mount applications.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 50A @ 25°C
  • Package: PG-TO252-3
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Status: Now obsolete (EOL)
  • Supply and Demand Status: Limited

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Quantity Unit Price Ext. Price
2+ $29.2920 $58.5840
5+ $24.0344 $120.1720
8+ $23.2836 $186.2688
11+ $22.5317 $247.8487
14+ $21.7810 $304.9340
18+ $19.5276 $351.4968
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Availability: 3,900 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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