The Infineon Technologies IPD11DP10NMATMA1 is a P-channel MOSFET transistor that is designed for use in discrete semiconductor products.

• Channel Type: P-Channel
• Product Category: Discrete Semiconductor Products
• Drain-Source Voltage: 100 V
• Continuous Drain Current: 3.4A (Ta), 22A (Tc) @ 25°C
• Rds On (Max) @ Id, Vgs: 111mOhm @ 18A, 10V
• Vgs(th) (Max) @ Id: 4V @ 1.7mA
• Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V
• Technology: MOSFET (Metal Oxide)
• Package: TO-252-3, DPak (2 Leads + Tab), SC-63
• Status: Active
• Popularity: Medium