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Same model may have multiple batches, images only for reference.
IPD12N03LB G Real Image
Same model may have multiple batches, images only for reference.

IPD12N03LB G

Part No IPD12N03LB G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 30A TO-252
Datasheet
IPD12N03LB G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 20μA
Max Gate Charge 11nC @ 5V
Max Input Capacitance 1300pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 52W (Tc)
Maximum Rds On at Id,Vgs 11.6 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 116556-IPD12N03LB G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPD12N03LB G CAD Model

Description

The Infineon Technologies IPD12N03LB G is an N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 52W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: Up to 30A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 20μA
  • Maximum Input Capacitance: 1300pF @ 15V
  • Maximum Rds On: 11.6 mOhm @ 30A and 10V
  • Case/Package: PG-TO252-3
  • Status: Obsolete (EOL)
  • Popularity: Medium popularity rating in the market

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