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IPD200N15N3GBTMA1

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Part No	IPD200N15N3GBTMA1
Manufacturer	Infineon Technologies
Catalog	Transistors – FETs, MOSFETs – Single
Description	MOSFET N-CH 150V 50A TO252-3
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Package	Tape & Reel (TR);Cut Tape (CT)
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150 V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	8V, 10V
Rds On (Max) @ Id, Vgs	20mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1820 pF @ 75 V
Power Dissipation (Max)	150W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Ultra Librarian 3D Model	Ultra Librarian IPD200N15N3GBTMA1 CAD Model

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IPD200N15N3GBTMA1

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