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Same model may have multiple batches, images only for reference.
IPD30N03S4L14ATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPD30N03S4L14ATMA1

Part No IPD30N03S4L14ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 30A TO252-3
Datasheet
IPD30N03S4L14ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 10μA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 980pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 31W (Tc)
Maximum Rds On at Id,Vgs 13.6 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1032165-IPD30N03S4L14ATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPD30N03S4L14ATMA1 CAD Model

Description

The Infineon Technologies IPD30N03S4L14ATMA1 is a N-Channel MOSFET designed for power management applications.

  • Power Dissipation: 31W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 30A (Tc)
  • Gate Charge: 14nC @ 10V
  • Package: PG-TO252-3
  • Temperature Range: -55°C to 175°C (TJ)
  • Packaging: Reel - TR

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130+ $0.7805 $101.4650
200+ $0.7561 $151.2200
275+ $0.7317 $201.2175
355+ $0.7074 $251.1270
475+ $0.6342 $301.2450
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