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Same model may have multiple batches, images only for reference.
IPD320N20N3GBTMA1 Real Image
Same model may have multiple batches, images only for reference.

IPD320N20N3GBTMA1

Part No IPD320N20N3GBTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
IPD320N20N3GBTMA1 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 32mOhm @ 34A, 10V
Vgs(th) (Max) @ Id 4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2350 pF @ 100 V
Power Dissipation (Max) 136W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number IPD320N
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1316376-IPD320N20N3GBTMA1
Ultra Librarian 3D Model Ultra Librarian IPD320N20N3GBTMA1 CAD Model

Description

The IPD320N20N3GBTMA1 is a MOSFET (Metal Oxide) transistor from the OptiMOS™ series of Infineon Technologies.

  • Series: OptiMOS™
  • Channel Type: N-Channel FET
  • Vdss: 200 V
  • Id: 34A (Tc) @ 25°C
  • Rds On: 32mOhm @ 34A and 10V
  • Qg: 29 nC @ 10 V
  • Ciss: 2350 pF @ 100 Vds
  • Vgs: ±20V
  • Vgs(th): 4V @ 90μA
  • Power Dissipation: 136W (Tc)
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Mounting: SMD (SMT)
  • Operating Temperature: -55°C to 175°C (TJ)
  • ECCN: EAR99

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