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Same model may have multiple batches, images only for reference.
IPD49CN10N G Real Image
Same model may have multiple batches, images only for reference.

IPD49CN10N G

Part No IPD49CN10N G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 20A TO252-3
Datasheet
IPD49CN10N G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 20μA
Max Gate Charge 16nC @ 10V
Max Input Capacitance 1090pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 44W (Tc)
Maximum Rds On at Id,Vgs 49 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1005711-IPD49CN10N G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPD49CN10N G CAD Model

Description

The Infineon Technologies IPD49CN10N G is an N-channel MOSFET transistor with a drain-source breakdown voltage of 100V and a continuous drain current of 20A @ 25°C.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 20A @ 25°C
  • Power Dissipation: 44W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 20μA
  • Package: PG-TO252-3
  • Maximum Rds On: 49 mOhm @ 20A and 10V
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
250+ $0.2356 $58.9000
600+ $0.1940 $116.4000
930+ $0.1871 $174.0030
1,275+ $0.1813 $231.1575
1,645+ $0.1756 $288.8620
2,210+ $0.1571 $347.1910
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 250 pcs
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