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IPD50N06S2-14

Name: IPD50N06S2-14
Brand: Infineon Technologies
SKU: 603450
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	IPD50N06S2-14
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	IPD50N06 - 55V-60V N-CHANNEL AUT
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	OptiMOS™
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	14.4mOhm @ 32A, 10V
Vgs(th) (Max) @ Id	4V @ 80µA
Gate Charge (Qg) (Max) @ Vgs	52 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1485 pF @ 25 V
Power Dissipation (Max)	136W (Tc)
Temperature Range - Operating	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3-11
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number	IPD50
Standard Package	127 pcs
ECCN	EAR99
HTSUS	8542.39.0001
Win Source Part Number	603450-IPD50N06S2-14
Ultra Librarian 3D Model	Ultra Librarian IPD50N06S2-14 CAD Model

Alternative Products

Description

The 603450-IPD50N06S2-14 is a N-Channel MOSFET transistor from the OptiMOS™ series by Infineon Technologies.

Drain to Source Voltage (Vdss): 55V
Continuous Drain Current (Id): 50A
Rds On (Max): 14.4mOhm @ 32A and 10V
Gate Charge (Qg): 52nC @ 10V
Input Capacitance (Ciss): 1485pF @ 25V
Maximum Power Dissipation: 136W
Package: TO-252-3, DPak
Mounting Type: Surface mountable
Operating Temperature: -55°C to 175°C

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
12+	$5.0427	$60.5124
28+	$4.1384	$115.8752
44+	$4.0090	$176.3960
60+	$3.8796	$232.7760
77+	$3.7503	$288.7731
104+	$3.3622	$349.6688

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 5,000 pieces

MOQ: 12 pcs

Order Increment : 1 pcs

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