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IPD60R3K3C6ATMA1

Part No IPD60R3K3C6ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 1.7A TO252-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 40μA
Max Gate Charge 4.6nC @ 10V
Max Input Capacitance 93pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 18.1W (Tc)
Maximum Rds On at Id,Vgs 3.3 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 106672-IPD60R3K3C6ATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPD60R3K3C6ATMA1 CAD Model

Description

The Infineon Technologies IPD60R3K3C6ATMA1 is a N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Power Dissipation: 18.1W (Tc)
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 1.7A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 3.5V @ 40μA
  • Maximum Gate Charge: 4.6nC @ 10V
  • Maximum Input Capacitance: 93pF @ 100V
  • Maximum Rds On: 3.3 Ohm @ 500mA, 10V
  • Mounting: SMD (SMT)
  • Package: Reel - TR
  • Popularity Rating: Medium
  • Supply and Demand Status: Balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.3557 $51.5765
305+ $0.3332 $101.6260
470+ $0.3219 $151.2930
670+ $0.2994 $200.5980
870+ $0.2882 $250.7340
1,085+ $0.2769 $300.4365
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 990 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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