The IPD60R650CEAUMA1 is a CoolMOS™ N-channel MOSFET transistor designed for use in discrete semiconductor products, specifically single FETs and MOSFETs. The transistor is manufactured by Infineon Technologies.

• FET Type: N-Channel
• Technology: CoolMOS™
• Continuous Drain Current (Id) @ 25°C: 9.9A (Tc)
• Drain to Source Voltage (Vdss): 600V
• Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
• Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63