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Same model may have multiple batches, images only for reference.
IPD60R750E6ATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPD60R750E6ATMA1

Part No IPD60R750E6ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 5.7A TO252
Datasheet
IPD60R750E6ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 170μA
Max Gate Charge 17.2nC @ 10V
Max Input Capacitance 373pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 48W (Tc)
Maximum Rds On at Id,Vgs 750 mOhm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 105369-IPD60R750E6ATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPD60R750E6ATMA1 CAD Model

Description

The Infineon Technologies IPD60R750E6ATMA1 is an N-Channel MOSFET designed for discrete semiconductor products.

  • Power Dissipation: 48W (Tc)
  • Continuous Drain Current: 5.7A (Tc) @ 25°C
  • Popularity: Medium demand
  • Supply and Demand Status: Balanced
  • Product Status: Active
  • Temperature Range: -55°C to 150°C (TJ)

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