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Same model may have multiple batches, images only for reference.
IPD640N06LGBTMA1 Real Image
Same model may have multiple batches, images only for reference.

IPD640N06LGBTMA1

Part No IPD640N06LGBTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 18A TO-252
Datasheet
IPD640N06LGBTMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 16μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 470pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 47W (Tc)
Maximum Rds On at Id,Vgs 64 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 125397-IPD640N06LGBTMA1
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian IPD640N06LGBTMA1 CAD Model

Description

The Infineon Technologies 125397-IPD640N06LGBTMA1 is a MOSFET designed for use in power management applications.

  • Supply and Demand Status: Balanced
  • Mounting: SMT
  • Package: PG-TO252-3
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Maximum Power Dissipation: 47W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Maximum Rds On: 64 mOhm @ 18A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9061 $57.1830
65+ $1.5640 $101.6600
100+ $1.5151 $151.5100
140+ $1.4662 $205.2680
180+ $1.4173 $255.1140
240+ $1.2707 $304.9680
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Availability: 2,350 pieces
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