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Same model may have multiple batches, images only for reference.
IPD65R600E6BTMA1 Real Image
Same model may have multiple batches, images only for reference.

IPD65R600E6BTMA1

Part No IPD65R600E6BTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 7.3A TO252-3
Datasheet
IPD65R600E6BTMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 210μA
Max Gate Charge 23nC @ 10V
Max Input Capacitance 440pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 63W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 2.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 114480-IPD65R600E6BTMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPD65R600E6BTMA1 CAD Model

Description

The Infineon Technologies IPD65R600E6BTMA1 is an N-channel MOSFET transistor.

  • Drain-Source Breakdown Voltage: 650V
  • Maximum Continuous Drain Current: 7.3A @ 25°C
  • Maximum Rds On: 600 mOhm @ 2.1A and 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 23nC @ 10V
  • Maximum Input Capacitance: 440pF @ 100V
  • Discrete Semiconductor Product: Yes
  • Power Dissipation: 63W (Tc)
  • Package: PG-TO252-3, TO-252-3, DPak (2 Leads + Tab), SC-63
  • Applications: power supplies, motor control, and lighting

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Quantity Unit Price Ext. Price
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175+ $0.6641 $116.2175
270+ $0.6433 $173.6910
375+ $0.6225 $233.4375
480+ $0.6018 $288.8640
645+ $0.5394 $347.9130
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