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Same model may have multiple batches, images only for reference.
IPI075N15N3G Real Image
Same model may have multiple batches, images only for reference.

IPI075N15N3G

Part No IPI075N15N3G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description OPTLMOS N-CHANNEL POWER MOSFET / N-Channel 150 V 120A (Tc) 300W (Tc) Through Hole PG-TO262-3-1
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™ 3
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Rds On (Max) @ Id, Vgs 7.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 93 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5470 pF @ 75 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3-1
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Standard Package 1 pcs
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 825996-IPI075N15N3G
Ultra Librarian 3D Model Ultra Librarian IPI075N15N3G CAD Model

Description

The IPI075N15N3G is an N-Channel MOSFET transistor in the OptiMOS™ 3 series designed for discrete semiconductor applications.

  • Drain to source voltage (Vdss): 150V
  • Continuous drain current (Id) @ 25°C: 120A
  • Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A and 10V
  • Gate charge (Qg) @ max Vgs: 93nC @ 10V
  • Input capacitance (Ciss) @ max Vds: 5470pF @ 75V
  • Maximum temperature range: -55°C to 175°C
  • HTSUS code: 8542.39.0001

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $5.3892 $59.2812
27+ $4.4220 $119.3940
41+ $4.2838 $175.6358
56+ $4.1457 $232.1592
73+ $4.0074 $292.5402
97+ $3.5929 $348.5113
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Availability: 6,000 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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