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Same model may have multiple batches, images only for reference.
IPI320N20N3G Real Image
Same model may have multiple batches, images only for reference.

IPI320N20N3G

Part No IPI320N20N3G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description OptiMOSTM3 Power-Transistor Features N-channel, normal level
Sample
Rohs State rohs
ECAD Module
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Categories Uncategorized
Manufacturer Infineon Technologies
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 825997-IPI320N20N3G
Ultra Librarian 3D Model Ultra Librarian IPI320N20N3G CAD Model

Description

The IPI320N20N3G is a high-performance power MOSFET designed by Infineon Technologies.

  • Drain-source breakdown voltage: 200V
  • Continuous drain current: 320A
  • Maximum power dissipation: 4.3W and 83W
  • Mounting style: SMD
  • Package: DirectFET Isometric L6
  • Drive voltage range: 4.5V to 10V
  • Rds On: 0.7mOhm @ 61A and 10V
  • Gate-source voltage: ±20V
  • Input capacitance: 6500pF @ 13V

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $7.0594 $63.5346
20+ $5.7923 $115.8460
31+ $5.6121 $173.9751
43+ $5.4308 $233.5244
56+ $5.2495 $293.9720
74+ $4.7066 $348.2884
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Availability: 3,000 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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