The IPL60R360P6SATMA1 is an N-channel MOSFET manufactured by Infineon Technologies.

• Commonly Used In: Discrete semiconductor products
• Drain-Source Breakdown Voltage: 600V
• Continuous Drain Current: 11.3A (Tc)
• Maximum Rds On @ Id, Vgs: 360 mOhm @ 4.5A, 10V
• Gate-Source Voltage: ±20V
• Gate-Source Threshold Voltage: 4.5V @ 370μA
• Gate Charge (Qg) (maximum) @ Vgs: 22nC @ 10V
• Input Capacitance (Ciss) (maximum) @ Vds: 1010pF @ 100V
• Package: 8-ThinPak (5x6)
• Power Dissipation (max): 89.3W (Tc)
• Temperature Range: -40°C to 150°C (TJ)
• Status: Active