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Same model may have multiple batches, images only for reference.
IPN70R1K5CE
Same model may have multiple batches, images only for reference.

IPN70R1K5CE

Part No IPN70R1K5CE
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
IPN70R1K5CE Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V
Current - Continuous Drain (Id) @ 25°C 5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 10.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 225 pF @ 100 V
Power Dissipation (Max) 5W (Tc)
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-SOT223
Package / Case TO-261-3
Other Names 2156-IPN70R1K5CE,ROCINFIPN70R1K5CE
Standard Package 1
HTSUS 0000.00.0000
Win Source Part Number 1278321-IPN70R1K5CE
Ultra Librarian 3D Model Ultra Librarian IPN70R1K5CE CAD Model

Description

The Infineon Technologies IPN70R1K5CE is a MOSFET transistor with a drain to source voltage (Vdss) of 700V and a continuous drain current of 5.4A (Tc).

  • Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 100µA
  • Power Dissipation (Max): 5W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
  • Vgs (Max): ±20V
  • Package: TO-261-3
  • Supplier Device Package: PG-SOT223
  • Series: TrenchStop™

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9166 $50.4130
120+ $0.8575 $102.9000
185+ $0.8279 $153.1615
265+ $0.7688 $203.7320
340+ $0.7392 $251.3280
425+ $0.7097 $301.6225
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Availability: 10,000 pieces
MOQ: 55 pcs
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