The Infineon Technologies IPP023N04NG is an N-channel MOSFET transistor with a drain-source breakdown voltage of 40V and a continuous drain current of 90A @ 25°C.

• Maximum Rds on: 2.3 mOhm @ 90A and 10V
• Gate-Source Threshold Voltage: 4V @ 95μA
• Max Gate Charge: 120nC @ 10V
• Max Input Capacitance: 10000pF @ 20V
• Package: PG-TO-220-3 package
• Maximum Power Dissipation: 167W (Tc)
• Application: Suitable for use in Discrete Semiconductor Products
• Drive Voltage: 10V
• Temperature Range: Between -55°C and 175°C (TJ)
• Supply and Demand: In balance