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Same model may have multiple batches, images only for reference.
IPP041N04 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPP041N04

Part No IPP041N04
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 80A TO220-3
Datasheet
IPP041N04 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 45μA
Max Gate Charge 56nC @ 10V
Max Input Capacitance 4500pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 94W (Tc)
Maximum Rds On at Id,Vgs 4.1 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 069029-IPP041N04
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPP041N04 CAD Model

Description

The IPP041N04 is a N-Channel MOSFET manufactured by Infineon Technologies.

  • Maximum Power Dissipation: 94W(Tc)
  • Continuous Drain Current at 25°C: 80A(Tc)
  • Drain-Source Breakdown Voltage: 40V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id,Vgs: 4.1 mOhm @ 80A, 10V
  • Maximum Gate Charge: 56nC @ 10V
  • Maximum Input Capacitance: 4500pF @ 20V
  • Supply and Demand Status: limited

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Quantity Unit Price Ext. Price
50+ $1.1966 $59.8300
120+ $0.9818 $117.8160
185+ $0.9517 $176.0645
255+ $0.9205 $234.7275
325+ $0.8905 $289.4125
435+ $0.7981 $347.1735
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Availability: 12,650 pieces
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