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Same model may have multiple batches, images only for reference.
IPP041N04NG Infineon Technologies
Same model may have multiple batches, images only for reference.

IPP041N04NG

Part No IPP041N04NG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 80A TO220-3
Datasheet
IPP041N04NG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 45μA
Max Gate Charge 56nC @ 10V
Max Input Capacitance 4500pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 94W (Tc)
Maximum Rds On at Id,Vgs 4.1 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 069030-IPP041N04NG
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPP041N04NG CAD Model

Description

The IPP041N04NG is a MOSFET integrated circuit manufactured by Infineon Technologies.

  • Polarity: N-channel
  • Maximum Power Dissipation: 94W (Tc)
  • Status: active
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Supply and Demand Status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0526 $57.8930
135+ $0.8637 $116.5995
210+ $0.8367 $175.7070
290+ $0.8097 $234.8130
370+ $0.7828 $289.6360
495+ $0.7018 $347.3910
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,200 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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