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IPP045N10N3GXKSA1

Name: IPP045N10N3GXKSA1
Brand: Infineon Technologies
SKU: 158523
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	IPP045N10N3GXKSA1
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 100V 100A TO220-3
Datasheet	IPP045N10N3GXKSA1 Datasheet
Sample
Rohs State
ECAD Module
	Add to BOM List New List Existing List This product has been added to your list. List name
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Tube/Rail
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	100V
Continuous Drain Current at 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Gate-Source Threshold Voltage	3.5V @ 150μA
Max Gate Charge	117nC @ 10V
Max Input Capacitance	8410pF @ 50V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	214W (Tc)
Maximum Rds On at Id,Vgs	4.5 mOhm @ 100A, 10V
Temperature Range - Operating	-55°C to 175°C (TJ)
Mounting	Through Hole
Case / Package	PG-TO-220-3
Dimension	TO-220-3
Win Source Part Number	123010-IPP045N10N3GXKSA1
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IPP045N10N3GXKSA1 CAD Model

Alternative Products

Description

The Infineon Technologies IPP045N10N3GXKSA1 MOSFET transistor is an active product with a maximum power dissipation of 214W (Tc).

Category: Discrete Semiconductor Products
Series: None
Popularity: medium
Supply and Demand Status: balanced
Package: PG-TO-220-3
Drain-Source Breakdown Voltage: 100V
Maximum Continuous Drain Current at 25°C: 100A (Tc)
Maximum Rds On at Id,Vgs: 4.5 mOhm @ 100A, 10V

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
40+	$1.4150	$56.6000
80+	$1.3254	$106.0320
120+	$1.2806	$153.6720
170+	$1.1911	$202.4870
220+	$1.1463	$252.1860
275+	$1.1015	$302.9125

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 16,840 pieces

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