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IPP04CN10NG

Part No IPP04CN10NG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 100A TO220-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 210 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 13800 pF @ 50 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
Base Product Number IPP04C
Standard Package 500 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 158526-IPP04CN10NG
Ultra Librarian 3D Model Ultra Librarian IPP04CN10NG CAD Model

Description

The 158526-IPP04CN10NG is a N-Channel MOSFET transistor from the OptiMOS series.

  • Application: discrete semiconductor products
  • Drain to Source Voltage: 100 V
  • Continuous Drain Current Rating: 100A @ 25°C
  • Maximum Rds On: 4.2mOhm @ 100A and 10V
  • Gate Charge: 210 nC @ 10V
  • Mounting: through-hole mounting
  • Package: TO-220-3 package
  • Manufacturer: Infineon Technologies
  • Product Status: obsolete product

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $11.2613 $67.5678
13+ $9.2400 $120.1200
20+ $8.9513 $179.0260
27+ $8.6625 $233.8875
35+ $8.3738 $293.0830
47+ $7.5075 $352.8525
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 120 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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