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Same model may have multiple batches, images only for reference.
IPP06CNE8N G Infineon Technologies
Same model may have multiple batches, images only for reference.

IPP06CNE8N G

Part No IPP06CNE8N G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 85V 100A TO-220
Datasheet
IPP06CNE8N G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 85V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 180μA
Gate Charge (Qg) (Maximum) @ Vgs 138nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 9240pF @ 40V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 214W (Tc)
Rds On (Maximum) @ Id, Vgs 6.5 mOhm @ 100A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package PG-TO-220-3
Package TO-220-3
Win Source Part Number 776898-IPP06CNE8N G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPP06CNE8N G CAD Model

Description

The Infineon Technologies IPP06CNE8NG is a N-Channel MOSFET transistor with a drain-source voltage of 85V and a continuous drain current of 100A (Tc).

  • Application: Power supplies and motor control
  • Package: TO-220-3
  • Maximum Power Dissipation: 214W (Tc)
  • Input Capacitance: 9240pF @ 40V
  • Maximum Gate-Source Voltage: ±20V
  • Status: Obsolete (EOL)
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9385 $61.0025
150+ $0.7701 $115.5150
235+ $0.7461 $175.3335
320+ $0.7219 $231.0080
415+ $0.6979 $289.6285
555+ $0.6257 $347.2635
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,910 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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