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IPP200N15N3GHKSA1

Part No IPP200N15N3GHKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel 150 V 50A (Tc) 150W (Tc) Through Hole PG-TO220-3
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Mfr Infineon Technologies
Series OptiMOS™
Packaging Tube
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1820 pF @ 75 V
Power Dissipation (Max) 150W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
Base Product Number IPP200N
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1477934-IPP200N15N3GHKSA1
Ultra Librarian 3D Model Ultra Librarian IPP200N15N3GHKSA1 CAD Model

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3244 $52.9760
85+ $1.2406 $105.4510
130+ $1.1987 $155.8310
180+ $1.1149 $200.6820
235+ $1.0730 $252.1550
295+ $1.0311 $304.1745
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Availability: 9,400 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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