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Same model may have multiple batches, images only for reference.
IPP260N06N3G
Same model may have multiple batches, images only for reference.

IPP260N06N3G

Part No IPP260N06N3G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™3
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 25.7mOhm @ 27A, 10V
Vgs(th) (Max) @ Id 4V @ 11µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 30 V
Power Dissipation (Max) 36W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
Standard Package 276 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 968959-IPP260N06N3G
Ultra Librarian 3D Model Ultra Librarian IPP260N06N3G CAD Model

Description

The IPP260N06N3G is an N-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) designed for use in discrete semiconductor products. Bold the product name (e.g., BAV99S,135 → IPP260N06N3G) and manufacturer (e.g., Nexperia USA Inc. → Infineon Technologies).

  • Type: N-Channel MOSFET
  • Series: OptiMOS™3
  • Drain-to-Source Voltage: 60V
  • Continuous Drain Current: 27A @ 25°C
  • On-Resistance: 25.7mOhm @ 27A and 10V
  • Gate Threshold Voltage: 4V @ 11μA
  • Power Dissipation: 36W @ 25°C
  • Mounting Type: Through-Hole
  • Package: TO-220-3
  • Temperature Range: -55°C to 175°C
  • Production Status: Active

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