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Same model may have multiple batches, images only for reference.
IPP50R380CE Real Image
Same model may have multiple batches, images only for reference.

IPP50R380CE

Part No IPP50R380CE
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 500V 9.9A PGTO220
Datasheet
IPP50R380CE Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 9.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 13V
Gate-Source Threshold Voltage 3.5V @ 260μA
Max Gate Charge 24.8nC @ 10V
Max Input Capacitance 584pF @ 100V
Maximum Gate-Source Voltage ±20V
FET Feature Super Junction
Power Dissipation (Max) 73W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 3.2A, 13V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 069066-IPP50R380CE
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPP50R380CE CAD Model

Description

The Infineon Technologies 069066-IPP50R380CE is a MOSFET transistor that features Super Junction FET technology.

  • Manufacturer: Infineon Technologies
  • Technology: Super Junction FET
  • Polarity: N-Channel
  • Maximum Power Dissipation: 73W (Tc)
  • Packaging: PG-TO-220-3
  • Dimension: TO-220-3
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 9.9A (Tc)
  • Gate-Source Threshold Voltage: 3.5V @ 260μA
  • Maximum Gate Charge: 24.8nC @ 10V
  • Maximum Input Capacitance: 584pF @ 100V
  • Maximum Rds On @ Id, Vgs: 380 mOhm @ 3.2A, 13V
  • Supply and Demand Status: limited

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