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IPP65R050CFD7AAKSA1

Part No IPP65R050CFD7AAKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 45A TO220-3 / N-Channel 650 V 45A (Tc) 227W (Tc) Through Hole PG-TO220-3
Datasheet
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series Automotive, AEC-Q101, CoolMOS™ CFD7A
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 50mOhm @ 24.8A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.24mA
Gate Charge (Qg) (Max) @ Vgs 102 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4975 pF @ 400 V
Power Dissipation (Max) 227W (Tc)
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
Base Product Number IPP65R050
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 448-IPP65R050CFD7AAKSA1,SP003793132
Standard Package 50
Win Source Part Number 1024622-IPP65R050CFD7AAKSA1
Ultra Librarian 3D Model Ultra Librarian IPP65R050CFD7AAKSA1 CAD Model

Description

The 1024622-IPP65R050CFD7AAKSA1 is an N-channel MOSFET transistor from Infineon Technologies.

  • It is designed for use in automotive applications and is AEC-Q101 qualified.
  • The CoolMOS CFD7A series transistor has a drain to source voltage of 650 V and a continuous drain current of 45A @ 25°C.
  • It has a low Rds on resistance of 50mOhm @ 24.8A and 10V Vgs.
  • The gate charge is 102 nC @ 10V Vgs and the input capacitance is 4975 pF @ 400 Vds.
  • The device is mounted through a hole and has a TO-220-3 package.
  • The operating temperature range is between -40°C to 150°C, and it is ECCN EAR99 compliant.

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