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Same model may have multiple batches, images only for reference.
IPP77N06S212AKSA2 Real Image
Same model may have multiple batches, images only for reference.

IPP77N06S212AKSA2

Part No IPP77N06S212AKSA2
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 77A TO220-3
Datasheet
IPP77N06S212AKSA2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 77A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 93μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 1770pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 158W (Tc)
Maximum Rds On at Id,Vgs 12 mOhm @ 38A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 1046028-IPP77N06S212AKSA2
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPP77N06S212AKSA2 CAD Model

Description

The Infineon Technologies 1046028-IPP77N06S212AKSA2 is an N-channel MOSFET that is designed to be used in a wide range of applications, including power supplies, motor control, and inverters.

  • Maximum Drain-Source Voltage: 55V
  • Maximum Continuous Drain Current: 77A
  • Gate-Source Threshold Voltage: 4V
  • Maximum Gate Charge: 60nC @ 10V
  • Package: PG-TO220-3-1
  • Maximum Power Dissipation: 158W (Tc)

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Quantity Unit Price Ext. Price
12+ $4.2485 $50.9820
29+ $3.4860 $101.0940
45+ $3.3770 $151.9650
62+ $3.2681 $202.6222
80+ $3.1592 $252.7360
106+ $2.8324 $300.2344
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Availability: 7,210 pieces
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