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Same model may have multiple batches, images only for reference.
IPP90R500C3XKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPP90R500C3XKSA1

Part No IPP90R500C3XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 11A TO-220
Datasheet
IPP90R500C3XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 740μA
Max Gate Charge 68nC @ 10V
Max Input Capacitance 1700pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 156W (Tc)
Maximum Rds On at Id,Vgs 500 mOhm @ 6.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 1046049-IPP90R500C3XKSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPP90R500C3XKSA1 CAD Model

Description

The Infineon Technologies 1046049-IPP90R500C3XKSA1 is a high-performance N-channel MOSFET transistor designed for use in various applications.

  • Mounting: Through-hole
  • Drain-Source Breakdown Voltage: 900V
  • Continuous Drain Current: 11A @ 25°C
  • Gate-Source Threshold Voltage: 3.5V @ 740μA
  • Maximum Gate Charge: 68nC @ 10V
  • Maximum Input Capacitance: 1700pF @ 100V
  • Maximum Rds On @ Id, Vgs: 500 mOhm @ 6.6A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.4756 $58.1828
32+ $3.6724 $117.5168
49+ $3.5576 $174.3224
68+ $3.4428 $234.1104
87+ $3.3282 $289.5534
117+ $2.9838 $349.1046
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Availability: 26 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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