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Same model may have multiple batches, images only for reference.
IPS050N03LGAKMA1 Real Image
Same model may have multiple batches, images only for reference.

IPS050N03LGAKMA1

Part No IPS050N03LGAKMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 50A TO251-3
Datasheet
IPS050N03LGAKMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 31nC @ 10V
Max Input Capacitance 3200pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 68W (Tc)
Maximum Rds On at Id,Vgs 5 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO251-3
Dimension TO-251-3 Stub Leads, IPak
Win Source Part Number 1046058-IPS050N03LGAKMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPS050N03LGAKMA1 CAD Model

Description

The Infineon Technologies 1046058-IPS050N03LGAKMA1 is an N-channel MOSFET transistor designed for use in power management applications.

  • Drain-Source Breakdown Voltage: 30V
  • Maximum Rds On: 5 mOhm @ 30A, 10V
  • Status: Obsolete
  • Popularity: Medium
  • Maximum Gate-Source Voltage: ±20V
  • Power Dissipation: 68W (Tc)

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98+ $2.9649 $290.5602
131+ $2.6577 $348.1587
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