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IPU09N03LAG

Part No IPU09N03LAG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 50A TO-251
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 20μA
Max Gate Charge 13nC @ 5V
Max Input Capacitance 1642pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 63W (Tc)
Maximum Rds On at Id,Vgs 8.8 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO251-3
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 069106-IPU09N03LAG
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPU09N03LAG CAD Model

Description

The IPU09N03LAG is a N-Channel MOSFET manufactured by Infineon Technologies.

  • Maximum Power Dissipation: 63W(Tc)
  • Continuous Drain Current: 50A(Tc) @ 25°C
  • Drain-Source Breakdown Voltage: 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id,Vgs: 8.8 mOhm @ 30A, 10V
  • Maximum Gate Charge: 13nC @ 5V
  • Maximum Input Capacitance: 1642pF @ 15V
  • Supply and Demand Status: Balanced

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