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Same model may have multiple batches, images only for reference.
IPW60R031CFD7XKSA1
Same model may have multiple batches, images only for reference.

IPW60R031CFD7XKSA1

Part No IPW60R031CFD7XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 63A TO247-3  /  N-Channel 650 V 63A (Tc) 278W (Tc) Through Hole PG-TO247-3
Datasheet
IPW60R031CFD7XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™ CFD7
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 31mOhm @ 32.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.63mA
Gate Charge (Qg) (Max) @ Vgs 141 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5623 pF @ 400 V
Power Dissipation (Max) 278W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package / Case TO-247-3
Base Product Number IPW60R031
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001617992,IPW60R031CFD7
Standard Package 30
Win Source Part Number 989386-IPW60R031CFD7XKSA1
Ultra Librarian 3D Model Ultra Librarian IPW60R031CFD7XKSA1 CAD Model

Description

The IPW60R031CFD7XKSA1 is a N-channel MOSFET designed for use in a variety of applications, including power supplies, motor drives, and lighting systems.

  • Drain to Source Voltage: 650V
  • Continuous Drain Current: 63A @ 25°C
  • Rds On: 31mOhm @ 32.6A and 10V
  • Vgs(th) (Max): 4.5V @ 1.63mA
  • Power Dissipation: 278W @ Tc
  • Package: TO-247-3 package
  • Gate Charge (Qg): 141 nC @ 10V
  • Input Capacitance (Ciss): 5623 pF @ 400V
  • Temperature Range: -55°C to 150°C (TJ)
  • Certification: CoolMOS™ CFD7 certified

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